Press-Pack IGBT
Press-pack IGBT (IEGT)
| TYPE | VDRM V | VRRM V | IT(AV)@80℃ A | ITGQM@CS A/µF | ITSM@10ms kA | VTM V | VTO V | rT mΩ | TVJM ℃ | Rthjc ℃/W | |
| CSG07E1400 | 1400 | 100 | 250 | 700 | 2 | 4 | ≤2.2 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| CSG07E1700 | 1700 | 16 | 240 | 700 | 1.5 | 4 | ≤2.5 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| Chithunzi cha CSG15F2500 | 2500 | 17 | 570 | 1500 | 3 | 10 | ≤2.8 | ≤1.50 | ≤0.90 | 125 | 0.027 |
| CSG20H2500 | 2500 | 17 | 830 | 2000 | 6 | 16 | ≤2.8 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG25H2500 | 2500 | 16 | 867 | 2500 | 6 | 18 | ≤3.1 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG30J2500 | 2500 | 17 | 1350 | 3000 | 5 | 30 | ≤2.5 | ≤1.50 | ≤0.33 | 125 | 0.012 |
| Chithunzi cha CSG10F2500 | 2500 | 15 | 830 | 1000 | 2 | 12 | ≤2.5 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG06D4500 | 4500 | 17 | 210 | 600 | 1 | 3.1 | ≤4.0 | ≤1.90 | ≤0.50 | 125 | 0.05 |
| Chithunzi cha CSG10F4500 | 4500 | 16 | 320 | 1000 | 1 | 7 | ≤3.5 | 1.9 | ≤0.35 | 125 | 0.03 |
| CSG20H4500 | 4500 | 16 | 745 | 2000 | 2 | 16 | ≤3.2 | ≤1.8 | ≤0.85 | 125 | 0.017 |
| CSG30J4500 | 4500 | 16 | 870 | 3000 | 6 | 16 | ≤4.0 | ≤2.2 | ≤0.60 | 125 | 0.012 |
| CSG40L4500 | 4500 | 16 | 1180 | 4000 | 3 | 20 | ≤4.0 | ≤2.1 | ≤0.58 | 125 | 0.011 |
Zindikirani:D- ndi diode part, A-popanda gawo la diode
Conventionally, ndi solder kukhudzana IGBT modules anagwiritsidwa ntchito pa switch gear ya flexible DC kufala dongosolo.Phukusi la module ndi gawo limodzi lochotsa kutentha.Mphamvu ya chipangizo ndi yochepa ndipo si yoyenera kulumikizidwa mu mndandanda, moyo wosauka mu mpweya wamchere, kugwedezeka kosasunthika odana ndi mantha kapena kutopa kwamafuta.
The latsopano atolankhani-kukhudzana mkulu-mphamvu atolankhani-paketi chipangizo IGBT osati kwathunthu amathetsa mavuto a ntchito mu soldering ndondomeko, kutopa matenthedwe soldering zakuthupi ndi otsika dzuwa disipation limodzi mbali kutentha komanso kuthetsa kukana matenthedwe pakati pa zigawo zosiyanasiyana, kuchepetsa kukula ndi kulemera.Ndipo kusintha kwambiri magwiridwe antchito komanso kudalirika kwa chipangizo cha IGBT.Ndizoyenera kukwaniritsa mphamvu zamphamvu, zamphamvu kwambiri, zodalirika kwambiri pamagetsi osinthika a DC.
Kusintha kwa mtundu wolumikizana ndi solder ndi press-pack IGBT ndikofunikira.
Kuyambira 2010, Runau Electronics idakonzedwanso kuti ipange chipangizo chatsopano cha IGBT chamtundu wa press-pack ndikupambana kupanga mu 2013. Ntchitoyi inatsimikiziridwa ndi ziyeneretso za dziko ndipo kupambana kwakukulu kunamalizidwa.
Tsopano tikhoza kupanga ndi kupereka mndandanda atolankhani-paketi IGBT wa IC osiyanasiyana 600A kuti 3000A ndi VCES osiyanasiyana mu 1700V kuti 6500V.Chiyembekezo chowoneka bwino cha makina osindikizira a IGBT opangidwa ku China kuti agwiritsidwe ntchito ku China flexible DC transmission system akuyembekezeredwa kwambiri ndipo ikhala mwala wina wapadziko lonse lapansi wamakampani opanga zamagetsi ku China pambuyo pa sitima yamagetsi yothamanga kwambiri.
Chiyambi Chachidule cha Mawonekedwe Omwe Alipo:
1. Mode: Press-pack IGBT CSG07E1700
●Makhalidwe amagetsi pambuyo pa kulongedza ndi kukanikiza
● M'mbuyokufananacholumikizidwamofulumira kuchira diodeanamaliza
● Parameter:
Mtengo wake (25 ℃)
a.Osonkhanitsa Emitter Voltage: VGES = 1700 (V)
b.Chipata Emitter Voltage: VCES = ± 20 (V)
c.Wotolera Pano: IC = 800 (A) ICP = 1600 (A)
d.Kutaya Mphamvu kwa Wosonkhanitsa: PC=4440(W)
e.Kutentha kwa Working Junction: Tj = －20 ~ 125 ℃
f.Kutentha kosungira: Tstg = －40 ~ 125 ℃
Zindikirani: chipangizocho chidzawonongeka ngati sichinavoteredwe
ZamagetsiCzovutaTC＝125℃,Rth (kutentha kukana kwamphambano kumlandu）osaphatikizidwa
a.Kutuluka kwa Chipata Pano: IGES = ± 5 (μA)
b.Wotolera Emitter Kutsekereza Current ICES=250(mA)
c.Osonkhanitsa Emitter Saturation Voltage: VCE(sat)=6(V)
d.Mphamvu ya Gate Emitter Threshold Voltage: VGE(th)=10(V)
e.Yatsani nthawi: Ton=2.5μs
f.Nthawi yozimitsa: Toff = 3μs
2. Mode: Press-pack IGBT CSG10F2500
●Makhalidwe amagetsi pambuyo pa kulongedza ndi kukanikiza
● M'mbuyokufananacholumikizidwamofulumira kuchira diodeanamaliza
● Parameter:
Mtengo wake (25 ℃)
a.Osonkhanitsa Emitter Voltage: VGES = 2500 (V)
b.Chipata Emitter Voltage: VCES = ± 20 (V)
c.Wosonkhanitsa Panopo: IC = 600 (A) ICP = 2000 (A)
d.Kutaya Mphamvu kwa Osonkhanitsa: PC=4800(W)
e.Kutentha kwa Working Junction: Tj = －40 ~ 125 ℃
f.Kutentha kosungira: Tstg = －40 ~ 125 ℃
Zindikirani: chipangizocho chidzawonongeka ngati sichinavoteredwe
ZamagetsiCzovutaTC＝125℃,Rth (kutentha kukana kwamphambano kumlandu）osaphatikizidwa
a.Kutuluka kwa Chipata Pano: IGES = ± 15 (μA)
b.Wotolera Emitter Kutsekereza Current ICES=25(mA)
c.Collector Emitter Saturation Voltage: VCE(sat)=3.2 (V)
d.Gate Emitter Threshold Voltage: VGE(th)=6.3(V)
e.Yatsani nthawi: Ton=3.2μs
f.Nthawi yothimitsa: Toff=9.8μs
g.Magetsi a Diode Forward: VF = 3.2 V
h.Nthawi Yobwezeretsanso Diode: Trr=1.0 μs
3. Mode: Press-pack IGBT CSG10F4500
●Makhalidwe amagetsi pambuyo pa kulongedza ndi kukanikiza
● M'mbuyokufananacholumikizidwamofulumira kuchira diodeanamaliza
● Parameter:
Mtengo wake (25 ℃)
a.Osonkhanitsa Emitter Voltage: VGES = 4500 (V)
b.Chipata Emitter Voltage: VCES = ± 20 (V)
c.Wosonkhanitsa Panopo: IC = 600 (A) ICP = 2000 (A)
d.Kutaya Mphamvu kwa Wosonkhanitsa: PC = 7700 (W)
e.Kutentha kwa Working Junction: Tj = －40 ~ 125 ℃
f.Kutentha kosungira: Tstg = －40 ~ 125 ℃
Zindikirani: chipangizocho chidzawonongeka ngati sichinavoteredwe
ZamagetsiCzovutaTC＝125℃,Rth (kutentha kukana kwamphambano kumlandu）osaphatikizidwa
a.Kutuluka kwa Chipata Pano: IGES = ± 15 (μA)
b.Wotolera Emitter Kutsekereza Current ICES=50(mA)
c.Collector Emitter Saturation Voltage: VCE(sat)=3.9 (V)
d.Chipata cha Emitter Threshold Voltage: VGE(th)=5.2 (V)
e.Yatsani nthawi: Ton=5.5μs
f.Nthawi yothimitsa: Toff = 5.5μs
g.Magetsi a Diode Forward: VF = 3.8 V
h.Nthawi Yobwezeretsanso Diode: Trr=2.0 μs
Zindikirani:Press-pack IGBT ndi mwayi pakudalirika kwamakina kwanthawi yayitali, kukana kwambiri kuwonongeka ndi mawonekedwe amtundu wa atolankhani kulumikiza, ndikosavuta kugwiritsa ntchito zida zingapo, poyerekeza ndi GTO thyristor, IGBT ndi njira yoyendetsera magetsi. .Choncho, n'zosavuta ntchito, otetezeka ndi lonse ntchito osiyanasiyana.